VP0106N3-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 60V 250MA TO92-3
MOSFET P-CH 60V 250MA TO92-3
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 60 V 250mA (Tj) 1W (Tc) Genomgående hål TO-92-3
P-Kanal 60 V 250mA (Tj) 1W (Tc) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The VP0106N3-G is a P-Channel MOSFET designed for applications requiring low power drive and fast switching speeds. It operates at a maximum drain-to-source voltage of 60V and can handle a continuous drain current of 250mA. The device features low on-state resistance (RDS(on)) of 6-15Ω, excellent thermal stability, and an integral source-drain diode, making it suitable for various switching and amplifying applications.
The VP0106N3-G is a P-Channel MOSFET designed for applications requiring low power drive and fast switching speeds. It operates at a maximum drain-to-source voltage of 60V and can handle a continuous drain current of 250mA. The device features low on-state resistance (RDS(on)) of 6-15Ω, excellent thermal stability, and an integral source-drain diode, making it suitable for various switching and amplifying applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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