SCT20N120AG
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SICFET N-CH 1200V 20A HIP247
SICFET N-CH 1200V 20A HIP247
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 20A (Tc) 153W (Tc) Genomgående hål ytmonterad HiP247™
N-Kanal 1200 V 20A (Tc) 153W (Tc) Genomgående hål ytmonterad HiP247™
Beskrivning (eng)
Beskrivning (eng)
The SCT20N120AG is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200V and a continuous drain current of 20A. It features a low on-resistance of 189 mΩ (typical at TJ=150 °C) and operates efficiently at high temperatures up to 200 °C. The device is housed in a HiP247 package, ensuring excellent thermal performance and suitability for high power density applications.
The SCT20N120AG is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200V and a continuous drain current of 20A. It features a low on-resistance of 189 mΩ (typical at TJ=150 °C) and operates efficiently at high temperatures up to 200 °C. The device is housed in a HiP247 package, ensuring excellent thermal performance and suitability for high power density applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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