RFP50N06
Tillverkare
HARRIS
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 50A TO220-3
MOSFET N-CH 60V 50A TO220-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 50A (Tc) 131W (Tc) Genomgående hål TO-220-3
N-Kanal 60 V 50A (Tc) 131W (Tc) Genomgående hål TO-220-3
Beskrivning (eng)
Beskrivning (eng)
The RFP50N06 is an N-Channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage of 60V and a continuous drain current rating of 50A. This device is housed in a TO-220-3 package, allowing for efficient heat dissipation with a thermal resistance of 1.0°C/W junction to case. It supports a maximum power dissipation of 131W at the case temperature (Tc). The RFP50N06 is ideal for switching and amplification applications in power management systems, motor control, and other high-current circuits.
The RFP50N06 is an N-Channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage of 60V and a continuous drain current rating of 50A. This device is housed in a TO-220-3 package, allowing for efficient heat dissipation with a thermal resistance of 1.0°C/W junction to case. It supports a maximum power dissipation of 131W at the case temperature (Tc). The RFP50N06 is ideal for switching and amplification applications in power management systems, motor control, and other high-current circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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