RFD16N05LSM9A
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 50V 16A TO252AA
MOSFET N-CH 50V 16A TO252AA
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 50 V 16A (Tc) 60W (Tc) ytmonterad TO-252AA
N-Kanal 50 V 16A (Tc) 60W (Tc) ytmonterad TO-252AA
Beskrivning (eng)
Beskrivning (eng)
The RFD16N05LSM9A is an N-Channel MOSFET designed for power applications, featuring a maximum drain-source voltage of 50 V and a continuous drain current of 16 A. It has a low on-state resistance (RDS(on)) of 0.047 Ω, optimized for 5 V gate drives, making it suitable for logic level control in various applications.
The RFD16N05LSM9A is an N-Channel MOSFET designed for power applications, featuring a maximum drain-source voltage of 50 V and a continuous drain current of 16 A. It has a low on-state resistance (RDS(on)) of 0.047 Ω, optimized for 5 V gate drives, making it suitable for logic level control in various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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