RFD16N05
Tillverkare
HARRIS
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 50V 16A IPAK
MOSFET N-CH 50V 16A IPAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 50 V 16A (Tc) 72W (Tc) Genomgående hål IPAK
N-Kanal 50 V 16A (Tc) 72W (Tc) Genomgående hål IPAK
Beskrivning (eng)
Beskrivning (eng)
The RFD16N05 is an N-Channel MOSFET designed for high-efficiency switching applications. With a maximum drain-source voltage of 50V and a continuous drain current rating of 16A, this device is capable of handling significant power levels, with a thermal resistance of 72W at the case temperature (Tc). The IPAK package allows for easy through-hole mounting, making it suitable for various PCB designs. This MOSFET is ideal for applications in power management, motor control, and other high-current switching scenarios, ensuring reliable performance in demanding environments.
The RFD16N05 is an N-Channel MOSFET designed for high-efficiency switching applications. With a maximum drain-source voltage of 50V and a continuous drain current rating of 16A, this device is capable of handling significant power levels, with a thermal resistance of 72W at the case temperature (Tc). The IPAK package allows for easy through-hole mounting, making it suitable for various PCB designs. This MOSFET is ideal for applications in power management, motor control, and other high-current switching scenarios, ensuring reliable performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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