RFD16N05
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
N-CHANNEL POWER MOSFET
N-CHANNEL POWER MOSFET
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 50 V 16A (Tc) 72W (Tc) Genomgående hål IPAK
N-Kanal 50 V 16A (Tc) 72W (Tc) Genomgående hål IPAK
Beskrivning (eng)
Beskrivning (eng)
The RFD16N05 from Fairchild Semiconductor is an N-Channel Power MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage of 50 V and can handle a continuous drain current of 16 A at a case temperature (Tc). With a power dissipation capability of 72 W (Tc), this device is suitable for various power management tasks. The MOSFET is housed in an IPAK package, allowing for through-hole mounting, which facilitates easy integration into circuit designs. Its robust performance makes it ideal for switching and amplification applications.
The RFD16N05 from Fairchild Semiconductor is an N-Channel Power MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage of 50 V and can handle a continuous drain current of 16 A at a case temperature (Tc). With a power dissipation capability of 72 W (Tc), this device is suitable for various power management tasks. The MOSFET is housed in an IPAK package, allowing for through-hole mounting, which facilitates easy integration into circuit designs. Its robust performance makes it ideal for switching and amplification applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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