RFD12N06RLESM9A
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 18A DPAK
MOSFET N-CH 60V 18A DPAK
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The RFD12N06RLESM9A is a 60V N-Channel MOSFET designed for high-efficiency applications. It features ultra-low on-resistance with RDS(ON) values of <63mΩ at VGS = 10V and <71mΩ at VGS = 5V. The device supports continuous drain currents of 18A at 25°C and has a maximum power dissipation of 49W. It operates within a temperature range of -55 to 175°C, making it suitable for demanding environments.
The RFD12N06RLESM9A is a 60V N-Channel MOSFET designed for high-efficiency applications. It features ultra-low on-resistance with RDS(ON) values of <63mΩ at VGS = 10V and <71mΩ at VGS = 5V. The device supports continuous drain currents of 18A at 25°C and has a maximum power dissipation of 49W. It operates within a temperature range of -55 to 175°C, making it suitable for demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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