RFD12N06RLESM9A
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 18A TO252AA
MOSFET N-CH 60V 18A TO252AA
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 18A (Tc) 49W (Tc) ytmonterad TO-252AA
N-Kanal 60 V 18A (Tc) 49W (Tc) ytmonterad TO-252AA
Beskrivning (eng)
Beskrivning (eng)
The RFD12N06RLESM9A is an N-Channel MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of 18A at a case temperature (Tc) of 25°C. The device has an ultra-low on-state resistance (RDS(on)) of 0.063Ω at VGS = 10V, making it suitable for power management in various electronic circuits. The TO-252AA package allows for surface mounting, enhancing thermal performance and space efficiency in designs.
The RFD12N06RLESM9A is an N-Channel MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of 18A at a case temperature (Tc) of 25°C. The device has an ultra-low on-state resistance (RDS(on)) of 0.063Ω at VGS = 10V, making it suitable for power management in various electronic circuits. The TO-252AA package allows for surface mounting, enhancing thermal performance and space efficiency in designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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