PBSS4230QAZ
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA PBSS4230QA - 30V, 2A NP
NEXPERIA PBSS4230QA - 30V, 2A NP
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 30 V 2 A 190 MHz 325 mW ytmonterad DFN1010D-3
Bipolär (BJT) Transistor NPN 30 V 2 A 190 MHz 325 mW ytmonterad DFN1010D-3
Beskrivning (eng)
Beskrivning (eng)
The NXP Semiconductors PBSS4230QA is a 30V, 2A NPN low VCEsat (BISS) transistor designed for high efficiency and minimal heat generation. It features a collector-emitter saturation voltage (VCEsat) of 135 mΩ at 1A, a transition frequency (fT) of 190 MHz, and is housed in a compact DFN1010D-3 surface mount package. Ideal for applications in load switching, power management, and battery-driven devices.
The NXP Semiconductors PBSS4230QA is a 30V, 2A NPN low VCEsat (BISS) transistor designed for high efficiency and minimal heat generation. It features a collector-emitter saturation voltage (VCEsat) of 135 mΩ at 1A, a transition frequency (fT) of 190 MHz, and is housed in a compact DFN1010D-3 surface mount package. Ideal for applications in load switching, power management, and battery-driven devices.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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