PBSS4230QAZ
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 30V 2A DFN1010D-3
TRANS NPN 30V 2A DFN1010D-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 30 V 2 A 190 MHz 325 mW ytmonterad DFN1010D-3
Bipolär (BJT) Transistor NPN 30 V 2 A 190 MHz 325 mW ytmonterad DFN1010D-3
Beskrivning (eng)
Beskrivning (eng)
The PBSS4230QAZ is a low VCEsat NPN bipolar transistor designed for high efficiency applications. It operates at a collector-emitter voltage of 30 V and supports a collector current of up to 2 A, with a peak current of 3 A. The device features a DFN1010D-3 surface mount package, providing reduced PCB area and enhanced thermal performance. It is suitable for load switching, battery-driven devices, and power management circuits.
The PBSS4230QAZ is a low VCEsat NPN bipolar transistor designed for high efficiency applications. It operates at a collector-emitter voltage of 30 V and supports a collector current of up to 2 A, with a peak current of 3 A. The device features a DFN1010D-3 surface mount package, providing reduced PCB area and enhanced thermal performance. It is suitable for load switching, battery-driven devices, and power management circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Petra eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K