PBRP113ZT-QR
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PREBIAS PNP 40V TO236AB
TRANS PREBIAS PNP 40V TO236AB
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 600 mA 250 mW ytmonterad TO-236AB
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 600 mA 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The PBRP113ZT-Q is a pre-biased PNP bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage of 40 V and supports an output current of 600 mA. The device features built-in bias resistors (R1 = 1 kΩ, R2 = 10 kΩ) and low collector-emitter saturation voltage (VCEsat) for efficient performance in compact designs.
The PBRP113ZT-Q is a pre-biased PNP bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage of 40 V and supports an output current of 600 mA. The device features built-in bias resistors (R1 = 1 kΩ, R2 = 10 kΩ) and low collector-emitter saturation voltage (VCEsat) for efficient performance in compact designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Kontakta säljare
Kontakta Marcus eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K