PBLS1502Y,115
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NOW NEXPERIA PBLS1502Y - SMALL S
NOW NEXPERIA PBLS1502Y - SMALL S
Detaljerad specifikation
Detaljerad specifikation
Förbise Biaiserad Bipolär Transistor (BJT) 1 NPN Förbise Biaiserad, 1 PNP 50V, 15V 100mA, 500mA 280MHz 300mW ytmonterad SOT-363.
Förbise Biaiserad Bipolär Transistor (BJT) 1 NPN Förbise Biaiserad, 1 PNP 50V, 15V 100mA, 500mA 280MHz 300mW ytmonterad SOT-363.
Beskrivning (eng)
Beskrivning (eng)
The NXP PBLS1502Y is a small SOT-363 package pre-biased bipolar transistor (BJT) featuring one NPN and one PNP configuration. It operates with a maximum collector-emitter voltage of 50V and a maximum base-emitter voltage of 15V, supporting a collector current of up to 100mA and a total power dissipation of 300mW. With a transition frequency of 280MHz, this device is ideal for high-frequency applications. Its compact surface mount design allows for efficient PCB layout and integration in various electronic circuits.
The NXP PBLS1502Y is a small SOT-363 package pre-biased bipolar transistor (BJT) featuring one NPN and one PNP configuration. It operates with a maximum collector-emitter voltage of 50V and a maximum base-emitter voltage of 15V, supporting a collector current of up to 100mA and a total power dissipation of 300mW. With a transition frequency of 280MHz, this device is ideal for high-frequency applications. Its compact surface mount design allows for efficient PCB layout and integration in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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