NP50P06SDG-E1-AY
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 60V 50A TO-252
MOSFET P-CH 60V 50A TO-252
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 60 V 50A (Tc) 1.2W (Ta), 84W (Tc) ytmonterad TO-252 (MP-3ZK)
P-Kanal 60 V 50A (Tc) 1.2W (Ta), 84W (Tc) ytmonterad TO-252 (MP-3ZK)
Beskrivning (eng)
Beskrivning (eng)
The NP50P06SDG-E1-AY is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a continuous Drain Current of -50A. It has a super low on-state resistance of RDS(on) = 16.5 mΩ at VGS = -10V and ID = -25A, making it suitable for automotive applications. The device is housed in a TO-252 package and is AEC-Q101 qualified.
The NP50P06SDG-E1-AY is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a continuous Drain Current of -50A. It has a super low on-state resistance of RDS(on) = 16.5 mΩ at VGS = -10V and ID = -25A, making it suitable for automotive applications. The device is housed in a TO-252 package and is AEC-Q101 qualified.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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