NJVMJB44H11T4G
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 80V 10A D2PAK
TRANS NPN 80V 10A D2PAK
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 10 A 50MHz 2 W ytmonterad D2PAK
Bipolär (BJT) Transistor NPN 80 V 10 A 50MHz 2 W ytmonterad D2PAK
Beskrivning (eng)
Beskrivning (eng)
The NJVMJB44H11T4G is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring robust switching capabilities. With a maximum collector-emitter voltage of 80V and a continuous collector current rating of 10A, this transistor is suitable for high-power applications. It operates effectively at frequencies up to 50MHz and can handle power dissipation of 2W. Packaged in a D2PAK surface mount configuration, it offers ease of integration into compact electronic designs, making it ideal for power management and signal amplification tasks.
The NJVMJB44H11T4G is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring robust switching capabilities. With a maximum collector-emitter voltage of 80V and a continuous collector current rating of 10A, this transistor is suitable for high-power applications. It operates effectively at frequencies up to 50MHz and can handle power dissipation of 2W. Packaged in a D2PAK surface mount configuration, it offers ease of integration into compact electronic designs, making it ideal for power management and signal amplification tasks.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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