MPSA06
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
BJT TO92 80V NPN 0.625W 150C
BJT TO92 80V NPN 0.625W 150C
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 500 mA 100MHz 625 mW Genomgående hål TO-92-3
Bipolär (BJT) Transistor NPN 80 V 500 mA 100MHz 625 mW Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The MPSA06 is a general-purpose NPN bipolar junction transistor (BJT) designed for amplifier applications. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 500 mA, and a power dissipation of 625 mW. The device operates at a maximum junction temperature of 150°C and has a frequency response of up to 100 MHz, making it suitable for various electronic applications.
The MPSA06 is a general-purpose NPN bipolar junction transistor (BJT) designed for amplifier applications. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 500 mA, and a power dissipation of 625 mW. The device operates at a maximum junction temperature of 150°C and has a frequency response of up to 100 MHz, making it suitable for various electronic applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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