MPSA06
Tillverkare
DIOTEC
Datablad
Datablad
Specifikation
Specifikation
BJT TO92 80V 500MA NPN 0.625W
BJT TO92 80V 500MA NPN 0.625W
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 80 V 500 mA 100 MHz 625 mW Genomgående hål TO-92
Bipolär (BJT) Transistor NPN 80 V 500 mA 100 MHz 625 mW Genomgående hål TO-92
Beskrivning (eng)
Beskrivning (eng)
The MPSA06 is a general-purpose NPN bipolar junction transistor (BJT) housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 500 mA, and a power dissipation (Ptot) of 625 mW. With a gain (hFE) greater than 100 and a transition frequency (fT) of 100 MHz, it is suitable for signal processing, switching, and amplification applications. The maximum junction temperature (Tjmax) is 150°C.
The MPSA06 is a general-purpose NPN bipolar junction transistor (BJT) housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 500 mA, and a power dissipation (Ptot) of 625 mW. With a gain (hFE) greater than 100 and a transition frequency (fT) of 100 MHz, it is suitable for signal processing, switching, and amplification applications. The maximum junction temperature (Tjmax) is 150°C.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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