MJ11033G
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
HIGH-CURRENT PNP SILICON POWER T
HIGH-CURRENT PNP SILICON POWER T
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Genomgående hål TO-204 (TO-3)
Bipolär (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Genomgående hål TO-204 (TO-3)
Beskrivning (eng)
Beskrivning (eng)
The MJ11033G is a high-current PNP silicon power transistor designed for use in high-power applications. This bipolar junction transistor (BJT) features a Darlington configuration, providing high current gain and efficiency. With a maximum collector-emitter voltage of 120 V, a continuous collector current rating of 50 A, and a power dissipation capability of 300 W, it is suitable for demanding environments. The device is housed in a TO-204 (TO-3) package, ensuring robust thermal performance and reliability in various electronic circuits.
The MJ11033G is a high-current PNP silicon power transistor designed for use in high-power applications. This bipolar junction transistor (BJT) features a Darlington configuration, providing high current gain and efficiency. With a maximum collector-emitter voltage of 120 V, a continuous collector current rating of 50 A, and a power dissipation capability of 300 W, it is suitable for demanding environments. The device is housed in a TO-204 (TO-3) package, ensuring robust thermal performance and reliability in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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