KSD2012GTU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 60V 3A TO220F-3
TRANS NPN 60V 3A TO220F-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Genomgående hål TO-220F-3
Bipolär (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Genomgående hål TO-220F-3
Beskrivning (eng)
Beskrivning (eng)
The KSD2012GTU is a Bipolar NPN Transistor designed for low-frequency power amplification. It features a collector-emitter voltage rating of 60 V, a collector current of 3 A, and a power dissipation capability of 25 W. This TO-220F-3 package transistor operates at a frequency of up to 3 MHz, making it suitable for various applications in power management and signal amplification.
The KSD2012GTU is a Bipolar NPN Transistor designed for low-frequency power amplification. It features a collector-emitter voltage rating of 60 V, a collector current of 3 A, and a power dissipation capability of 25 W. This TO-220F-3 package transistor operates at a frequency of up to 3 MHz, making it suitable for various applications in power management and signal amplification.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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