KSD2012GTU
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 60V 3A TO220F-3
TRANS NPN 60V 3A TO220F-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Genomgående hål TO-220F-3
Bipolär (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Genomgående hål TO-220F-3
Beskrivning (eng)
Beskrivning (eng)
The KSD2012GTU is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 60V and a continuous collector current rating of 3A, this transistor operates effectively at frequencies up to 3MHz. It is housed in a TO-220F-3 package, allowing for easy mounting and heat dissipation, making it suitable for power management and signal processing applications in consumer electronics and industrial systems.
The KSD2012GTU is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 60V and a continuous collector current rating of 3A, this transistor operates effectively at frequencies up to 3MHz. It is housed in a TO-220F-3 package, allowing for easy mounting and heat dissipation, making it suitable for power management and signal processing applications in consumer electronics and industrial systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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