ISL9V2040D3ST
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
IGBT 430V 10A TO252AA
IGBT 430V 10A TO252AA
Detaljerad specifikation
Detaljerad specifikation
IGBT 430 V 10 A 130 W Ytmonterad TO-252AA
IGBT 430 V 10 A 130 W Ytmonterad TO-252AA
Beskrivning (eng)
Beskrivning (eng)
The ISL9V2040D3ST from onsemi is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient power management. With a voltage rating of 430V and a current rating of 10A, this device can handle a maximum power dissipation of 130W. It is housed in a TO-252AA package, which is suitable for surface mount technology, ensuring a compact footprint and ease of integration into various electronic circuits. This IGBT is ideal for use in motor drives, power inverters, and other high-voltage applications.
The ISL9V2040D3ST from onsemi is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient power management. With a voltage rating of 430V and a current rating of 10A, this device can handle a maximum power dissipation of 130W. It is housed in a TO-252AA package, which is suitable for surface mount technology, ensuring a compact footprint and ease of integration into various electronic circuits. This IGBT is ideal for use in motor drives, power inverters, and other high-voltage applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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