HUF75631S3ST
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 33A D2PAK
MOSFET N-CH 100V 33A D2PAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 33A (Tc) 120W (Tc) ytmonterad TO-263 (D2PAK)
N-Kanal 100 V 33A (Tc) 120W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The HUF75631S3ST is an N-Channel MOSFET with a maximum drain-source voltage of 100V and a continuous drain current rating of 33A at a case temperature (Tc) of 25°C. It features an ultra-low on-resistance (RDS(on)) of 0.040Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK package and has a power dissipation capability of 120W.
The HUF75631S3ST is an N-Channel MOSFET with a maximum drain-source voltage of 100V and a continuous drain current rating of 33A at a case temperature (Tc) of 25°C. It features an ultra-low on-resistance (RDS(on)) of 0.040Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK package and has a power dissipation capability of 120W.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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