HUF75631S3ST
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 33A D2PAK
MOSFET N-CH 100V 33A D2PAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 33A (Tc) 120W (Tc) ytmonterad TO-263 (D2PAK)
N-Kanal 100 V 33A (Tc) 120W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The HUF75631S3ST is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 33A at a case temperature (Tc) of 25°C. This device can handle a power dissipation of up to 120W (Tc), making it suitable for demanding power management tasks. Packaged in a D2PAK (TO-263) surface mount configuration, it offers efficient thermal performance and is ideal for space-constrained designs in various electronic circuits.
The HUF75631S3ST is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 33A at a case temperature (Tc) of 25°C. This device can handle a power dissipation of up to 120W (Tc), making it suitable for demanding power management tasks. Packaged in a D2PAK (TO-263) surface mount configuration, it offers efficient thermal performance and is ideal for space-constrained designs in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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