FQD19N10LTM
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 15.6A DPAK
MOSFET N-CH 100V 15.6A DPAK
Detaljerad specifikation
Detaljerad specifikation
-
-
Beskrivning (eng)
Beskrivning (eng)
The FQD19N10LTM is an N-Channel enhancement mode power MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 15.6A at TC = 25°C. It features low on-state resistance (RDS(ON) < 100mΩ at VGS = 10V) and excellent switching performance, making it suitable for various power applications.
The FQD19N10LTM is an N-Channel enhancement mode power MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 15.6A at TC = 25°C. It features low on-state resistance (RDS(ON) < 100mΩ at VGS = 10V) and excellent switching performance, making it suitable for various power applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Jan-Erik eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K