FQD19N10LTM
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 15.6A DPAK
MOSFET N-CH 100V 15.6A DPAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 15.6A (Tc) 2.5W (Ta), 50W (Tc) ytmonterad TO-252AA
N-Kanal 100 V 15.6A (Tc) 2.5W (Ta), 50W (Tc) ytmonterad TO-252AA
Beskrivning (eng)
Beskrivning (eng)
The FQD19N10LTM from onsemi is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 15.6A at a case temperature (Tc). The device can handle a power dissipation of 2.5W at ambient temperature (Ta) and up to 50W at Tc, making it suitable for demanding power management tasks. Packaged in a DPAK (TO-252AA) surface mount configuration, it offers efficient thermal performance and is ideal for space-constrained designs.
The FQD19N10LTM from onsemi is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 15.6A at a case temperature (Tc). The device can handle a power dissipation of 2.5W at ambient temperature (Ta) and up to 50W at Tc, making it suitable for demanding power management tasks. Packaged in a DPAK (TO-252AA) surface mount configuration, it offers efficient thermal performance and is ideal for space-constrained designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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