FQD13N10LTM
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 10A DPAK
MOSFET N-CH 100V 10A DPAK
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FQD13N10L is a 100V N-Channel MOSFET designed for high-performance applications. It features a maximum continuous drain current of 10A at TC = 25°C, with an on-state resistance (RDS(on)) of less than 180mΩ at VGS = 10V. This device is optimized for reduced on-state resistance and superior switching performance, making it suitable for various power applications.
The FQD13N10L is a 100V N-Channel MOSFET designed for high-performance applications. It features a maximum continuous drain current of 10A at TC = 25°C, with an on-state resistance (RDS(on)) of less than 180mΩ at VGS = 10V. This device is optimized for reduced on-state resistance and superior switching performance, making it suitable for various power applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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