FQD13N10LTM
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 10A DPAK
MOSFET N-CH 100V 10A DPAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 10A (Tc) 2,5W (Ta), 40W (Tc) ytmonterad TO-252AA
N-Kanal 100 V 10A (Tc) 2,5W (Ta), 40W (Tc) ytmonterad TO-252AA
Beskrivning (eng)
Beskrivning (eng)
The FQD13N10LTM is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 10A at a case temperature of 25°C. The device has a low on-state resistance (RDS(on)) of 180 mΩ at VGS = 10V and ID = 5A, making it suitable for efficient power management in various applications. The package type is DPAK, allowing for surface-mounted configurations.
The FQD13N10LTM is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 10A at a case temperature of 25°C. The device has a low on-state resistance (RDS(on)) of 180 mΩ at VGS = 10V and ID = 5A, making it suitable for efficient power management in various applications. The package type is DPAK, allowing for surface-mounted configurations.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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