FDV303N
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Specifikation
Specifikation
MOSFET N-CH 25V 680MA SOT23
MOSFET N-CH 25V 680MA SOT23
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDV303N is an N-channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 25V and a continuous drain current rating of 680mA. Packaged in a compact SOT23 form factor, this MOSFET is ideal for space-constrained designs. It offers low on-resistance (RDS(on)) characteristics, ensuring efficient power management and thermal performance. The FDV303N is suitable for various switching and amplification applications, making it a versatile choice for engineers seeking reliable performance in their circuits.
The FDV303N is an N-channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 25V and a continuous drain current rating of 680mA. Packaged in a compact SOT23 form factor, this MOSFET is ideal for space-constrained designs. It offers low on-resistance (RDS(on)) characteristics, ensuring efficient power management and thermal performance. The FDV303N is suitable for various switching and amplification applications, making it a versatile choice for engineers seeking reliable performance in their circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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