FDV303N
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 25V 680MA SOT23
MOSFET N-CH 25V 680MA SOT23
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 25 V 680mA (Ta) 350mW (Ta) ytmonterad SOT-23-3
N-Kanal 25 V 680mA (Ta) 350mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The FDV303N is an N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of 25V and a continuous drain current of 680mA. It offers low on-state resistance (RDS(ON)) of 0.45 Ω at VGS = 4.5 V, making it suitable for battery-powered devices. The device is housed in a compact SOT-23 package, ensuring efficient space utilization in electronic designs.
The FDV303N is an N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of 25V and a continuous drain current of 680mA. It offers low on-state resistance (RDS(ON)) of 0.45 Ω at VGS = 4.5 V, making it suitable for battery-powered devices. The device is housed in a compact SOT-23 package, ensuring efficient space utilization in electronic designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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