FDS4435BZ
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Specifikation
Specifikation
MOSFET P-CH 30V 8.8A 8SOIC
MOSFET P-CH 30V 8.8A 8SOIC
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDS4435BZ is a P-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 8.8A, making it suitable for various power management tasks. Packaged in an 8-pin SOIC (Small Outline Integrated Circuit) format, this MOSFET offers low on-resistance, ensuring minimal power loss during operation. Its compact size and robust performance make it ideal for use in consumer electronics, automotive applications, and power supply circuits.
The FDS4435BZ is a P-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 8.8A, making it suitable for various power management tasks. Packaged in an 8-pin SOIC (Small Outline Integrated Circuit) format, this MOSFET offers low on-resistance, ensuring minimal power loss during operation. Its compact size and robust performance make it ideal for use in consumer electronics, automotive applications, and power supply circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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