FDS4435BZ
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 30V 8.8A 8SOIC
MOSFET P-CH 30V 8.8A 8SOIC
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 30 V 8.8A (Ta) 2.5W (Ta) ytmonterad 8-SOIC
P-Kanal 30 V 8.8A (Ta) 2.5W (Ta) ytmonterad 8-SOIC
Beskrivning (eng)
Beskrivning (eng)
The FDS4435BZ from onsemi is a P-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 8.8A at ambient temperature (Ta). This device is housed in an 8-SOIC package, allowing for surface mount installation, which is ideal for space-constrained designs. With a power dissipation capability of 2.5W at Ta, it is suitable for various applications requiring reliable performance in power management and signal switching.
The FDS4435BZ from onsemi is a P-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 8.8A at ambient temperature (Ta). This device is housed in an 8-SOIC package, allowing for surface mount installation, which is ideal for space-constrained designs. With a power dissipation capability of 2.5W at Ta, it is suitable for various applications requiring reliable performance in power management and signal switching.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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