FDP036N10A
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 120A TO220
MOSFET N-CH 100V 120A TO220
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDP036N10A is a high-performance N-Channel MOSFET designed for applications requiring fast switching speeds and low on-state resistance. With a maximum drain-source voltage of 100V and a continuous drain current of 120A, it features a low RDS(on) of 3.6 mΩ at VGS = 10V, making it ideal for synchronous rectification, battery protection circuits, and motor drives.
The FDP036N10A is a high-performance N-Channel MOSFET designed for applications requiring fast switching speeds and low on-state resistance. With a maximum drain-source voltage of 100V and a continuous drain current of 120A, it features a low RDS(on) of 3.6 mΩ at VGS = 10V, making it ideal for synchronous rectification, battery protection circuits, and motor drives.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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