FDP036N10A
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 120A TO220-3
MOSFET N-CH 100V 120A TO220-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 120A (Tc) 333W (Tc) Genomgående hål TO-220-3
N-Kanal 100 V 120A (Tc) 333W (Tc) Genomgående hål TO-220-3
Beskrivning (eng)
Beskrivning (eng)
The FDP036N10A is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 120A. It features a low on-state resistance (RDS(on)) of 3.2 mΩ at VGS = 10V and ID = 75A, with a power dissipation capability of 333W. This device is designed for high-performance applications requiring efficient switching and low power loss.
The FDP036N10A is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 120A. It features a low on-state resistance (RDS(on)) of 3.2 mΩ at VGS = 10V and ID = 75A, with a power dissipation capability of 333W. This device is designed for high-performance applications requiring efficient switching and low power loss.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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