FDN360P
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Specifikation
Specifikation
MOSFET P-CH 30V 2A SOT23
MOSFET P-CH 30V 2A SOT23
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDN360P is a P-channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 30V and a continuous drain current rating of 2A. Packaged in a compact SOT23 form factor, this device is ideal for space-constrained designs. The FDN360P exhibits low on-resistance, ensuring efficient power management and minimal heat generation during operation. This MOSFET is suitable for various switching applications, including load switching and signal amplification in consumer electronics and automotive systems.
The FDN360P is a P-channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 30V and a continuous drain current rating of 2A. Packaged in a compact SOT23 form factor, this device is ideal for space-constrained designs. The FDN360P exhibits low on-resistance, ensuring efficient power management and minimal heat generation during operation. This MOSFET is suitable for various switching applications, including load switching and signal amplification in consumer electronics and automotive systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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