FDN360P
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 30V 2A SUPERSOT3
MOSFET P-CH 30V 2A SUPERSOT3
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 30 V 2A (Ta) 500mW (Ta) ytmonterad SOT-23-3
P-Kanal 30 V 2A (Ta) 500mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The FDN360P is a P-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of -30V and a continuous drain current of -2A. It offers low on-state resistance (RDS(ON)) of 80 mΩ at VGS = -10V, and a low gate charge of 6.2 nC, making it suitable for battery-powered devices requiring efficient switching performance.
The FDN360P is a P-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of -30V and a continuous drain current of -2A. It offers low on-state resistance (RDS(ON)) of 80 mΩ at VGS = -10V, and a low gate charge of 6.2 nC, making it suitable for battery-powered devices requiring efficient switching performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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