FDN359BN
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 30V 2.7A SUPERSOT3
MOSFET N-CH 30V 2.7A SUPERSOT3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 30 V 2.7A (Ta) 500mW (Ta) ytmonterad SOT-23-3
N-Kanal 30 V 2.7A (Ta) 500mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The FDN359BN is an N-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of 30V, continuous drain current of 2.7A, and a low on-state resistance (RDS(on)) of 0.046 Ω at VGS = 10V. The device is housed in a SOT-23-3 package, ensuring fast switching and low power loss.
The FDN359BN is an N-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of 30V, continuous drain current of 2.7A, and a low on-state resistance (RDS(on)) of 0.046 Ω at VGS = 10V. The device is housed in a SOT-23-3 package, ensuring fast switching and low power loss.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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