FDN359AN
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 30V 2.7A SOT23
MOSFET N-CH 30V 2.7A SOT23
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDN359AN is an N-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source Voltage (VDSS) of 30V and a continuous Drain Current (ID) of 2.7A. It exhibits low on-state resistance (RDS(ON)) of 46mΩ at VGS = 10V, ensuring efficient performance in battery-powered devices. Its compact SOT-23 package enhances integration in space-constrained designs.
The FDN359AN is an N-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source Voltage (VDSS) of 30V and a continuous Drain Current (ID) of 2.7A. It exhibits low on-state resistance (RDS(ON)) of 46mΩ at VGS = 10V, ensuring efficient performance in battery-powered devices. Its compact SOT-23 package enhances integration in space-constrained designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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