FDN359AN
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 30V 2.7A SUPERSOT3
MOSFET N-CH 30V 2.7A SUPERSOT3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 30 V 2.7A (Ta) 500mW (Ta) ytmonterad SOT-23-3
N-Kanal 30 V 2.7A (Ta) 500mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The FDN359AN is an N-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 2.7A. With a low on-state resistance (RDS(ON)) of 0.046 Ω at VGS = 10V, it ensures minimal power loss and fast switching capabilities, making it ideal for efficient power management in compact designs.
The FDN359AN is an N-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 2.7A. With a low on-state resistance (RDS(ON)) of 0.046 Ω at VGS = 10V, it ensures minimal power loss and fast switching capabilities, making it ideal for efficient power management in compact designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Martin eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K