FDN358P
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 30V 1.5A SOT23
MOSFET P-CH 30V 1.5A SOT23
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDN358P is a P-channel MOSFET designed for portable electronics applications, featuring a maximum drain-source voltage of -30V and continuous drain current of -1.5A. It offers low on-state resistance (RDS(ON)) of 90mΩ at VGS = -10V, and a low gate charge of 4 nC, making it suitable for load switching, power management, and battery charging circuits.
The FDN358P is a P-channel MOSFET designed for portable electronics applications, featuring a maximum drain-source voltage of -30V and continuous drain current of -1.5A. It offers low on-state resistance (RDS(ON)) of 90mΩ at VGS = -10V, and a low gate charge of 4 nC, making it suitable for load switching, power management, and battery charging circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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