FDN358P
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 30V 1.5A SUPERSOT3
MOSFET P-CH 30V 1.5A SUPERSOT3
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 30 V 1.5A (Ta) 500mW (Ta) ytmonterad SOT-23-3
P-Kanal 30 V 1.5A (Ta) 500mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The FDN358P from onsemi is a P-Channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 1.5A at ambient temperature (Ta). The device is housed in a compact Surface Mount SOT-23-3 package, allowing for space-saving designs in electronic circuits. With a power dissipation capability of 500mW (Ta), this MOSFET is suitable for various low-voltage applications, ensuring reliable performance in demanding environments.
The FDN358P from onsemi is a P-Channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 1.5A at ambient temperature (Ta). The device is housed in a compact Surface Mount SOT-23-3 package, allowing for space-saving designs in electronic circuits. With a power dissipation capability of 500mW (Ta), this MOSFET is suitable for various low-voltage applications, ensuring reliable performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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