FDN336P
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 20V 1.3A SOT23
MOSFET P-CH 20V 1.3A SOT23
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDN336P is a P-Channel MOSFET designed for 2.5V applications, featuring a maximum Drain-Source Voltage of -20V and a continuous Drain Current of -1.3A. It offers low on-state resistance (RDS(ON)) of 91mΩ at VGS = -4.5V, ensuring efficient power management and load switching in portable electronics. Its compact SOT-23 package enhances integration in space-constrained designs.
The FDN336P is a P-Channel MOSFET designed for 2.5V applications, featuring a maximum Drain-Source Voltage of -20V and a continuous Drain Current of -1.3A. It offers low on-state resistance (RDS(ON)) of 91mΩ at VGS = -4.5V, ensuring efficient power management and load switching in portable electronics. Its compact SOT-23 package enhances integration in space-constrained designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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