FDN335N
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
SOT-23 MOSFETS ROHS
SOT-23 MOSFETS ROHS
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 20 V 1.7A (Ta) 1W (Ta) ytmonterad SOT-23
P-Kanal 20 V 1.7A (Ta) 1W (Ta) ytmonterad SOT-23
Beskrivning (eng)
Beskrivning (eng)
The FDN335N from UMW is a P-Channel MOSFET designed for surface mount applications, housed in a compact SOT-23 package. It operates at a maximum voltage of 20 V and can handle a continuous drain current of 1.7 A at ambient temperature (Ta). The device has a power dissipation capability of 1 W (Ta), making it suitable for various low to medium power applications. This component is compliant with RoHS standards, ensuring it meets environmental regulations. Its small footprint and efficient performance make it ideal for space-constrained designs.
The FDN335N from UMW is a P-Channel MOSFET designed for surface mount applications, housed in a compact SOT-23 package. It operates at a maximum voltage of 20 V and can handle a continuous drain current of 1.7 A at ambient temperature (Ta). The device has a power dissipation capability of 1 W (Ta), making it suitable for various low to medium power applications. This component is compliant with RoHS standards, ensuring it meets environmental regulations. Its small footprint and efficient performance make it ideal for space-constrained designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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