FDN335N
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 20V 1.7A SUPERSOT3
MOSFET N-CH 20V 1.7A SUPERSOT3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 20 V 1.7A (Ta) 500mW (Ta) ytmonterad SOT-23-3
N-Kanal 20 V 1.7A (Ta) 500mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The FDN335N from onsemi is an N-Channel MOSFET designed for efficient switching applications. It operates at a maximum voltage of 20V and can handle a continuous drain current of 1.7A at a temperature of 25°C, with a power dissipation capability of 500mW. This device is housed in a compact SOT-23-3 package, making it suitable for surface mount applications. The FDN335N is ideal for low-voltage power management, signal switching, and other applications requiring high efficiency and reliability in a small footprint.
The FDN335N from onsemi is an N-Channel MOSFET designed for efficient switching applications. It operates at a maximum voltage of 20V and can handle a continuous drain current of 1.7A at a temperature of 25°C, with a power dissipation capability of 500mW. This device is housed in a compact SOT-23-3 package, making it suitable for surface mount applications. The FDN335N is ideal for low-voltage power management, signal switching, and other applications requiring high efficiency and reliability in a small footprint.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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