FDN306P
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 12V 2.6A SOT23
MOSFET P-CH 12V 2.6A SOT23
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDN306P is a P-Channel MOSFET optimized for battery power management applications. It features a maximum drain-source voltage of -12V and a continuous drain current of -2.6A. The device exhibits low on-state resistance (RDS(ON)) values of 40 mΩ at VGS = -4.5V, making it suitable for efficient load switching and battery protection. Its fast switching speed and advanced trench technology enhance performance in compact designs.
The FDN306P is a P-Channel MOSFET optimized for battery power management applications. It features a maximum drain-source voltage of -12V and a continuous drain current of -2.6A. The device exhibits low on-state resistance (RDS(ON)) values of 40 mΩ at VGS = -4.5V, making it suitable for efficient load switching and battery protection. Its fast switching speed and advanced trench technology enhance performance in compact designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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