FDN306P
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 12V 2.6A SUPERSOT3
MOSFET P-CH 12V 2.6A SUPERSOT3
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 12 V 2.6A (Ta) 500mW (Ta) ytmonterad SOT-23-3
P-Kanal 12 V 2.6A (Ta) 500mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The FDN306P from onsemi is a P-Channel MOSFET designed for efficient switching applications. It operates at a maximum voltage of 12V and can handle a continuous drain current of 2.6A at a temperature of 25°C. This device features a power dissipation capability of 500mW, making it suitable for compact designs. Packaged in a surface-mounted SOT-23-3 configuration, the FDN306P is ideal for space-constrained applications where performance and reliability are critical. Its low RDS(on) ensures minimal power loss during operation.
The FDN306P from onsemi is a P-Channel MOSFET designed for efficient switching applications. It operates at a maximum voltage of 12V and can handle a continuous drain current of 2.6A at a temperature of 25°C. This device features a power dissipation capability of 500mW, making it suitable for compact designs. Packaged in a surface-mounted SOT-23-3 configuration, the FDN306P is ideal for space-constrained applications where performance and reliability are critical. Its low RDS(on) ensures minimal power loss during operation.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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