FDD86113LZ
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 4.2A/5.5A DPAK
MOSFET N-CH 100V 4.2A/5.5A DPAK
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDD86113LZ is a 100V N-Channel MOSFET featuring Shielded Gate technology for low RDS(on) and high performance. It supports continuous drain currents of 5.5A at TC = 25 °C and 4.2A at TA = 25 °C, with a maximum power dissipation of 29W. The device is suitable for DC-DC conversion applications.
The FDD86113LZ is a 100V N-Channel MOSFET featuring Shielded Gate technology for low RDS(on) and high performance. It supports continuous drain currents of 5.5A at TC = 25 °C and 4.2A at TA = 25 °C, with a maximum power dissipation of 29W. The device is suitable for DC-DC conversion applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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