FDD86113LZ
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 4.2A/5.5A DPAK
MOSFET N-CH 100V 4.2A/5.5A DPAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) ytmonterad TO-252AA
N-Kanal 100 V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) ytmonterad TO-252AA
Beskrivning (eng)
Beskrivning (eng)
The FDD86113LZ is an N-Channel MOSFET featuring a maximum Drain-Source Voltage of 100 V and a continuous Drain Current of 5.5 A (Tc) and 4.2 A (Ta). It offers a maximum RDS(on) of 104 mΩ at VGS = 10 V and ID = 4.2 A, with a power dissipation capability of 29 W (Tc). This device is housed in a surface-mounted TO-252AA package, optimized for low on-state resistance and superior switching performance.
The FDD86113LZ is an N-Channel MOSFET featuring a maximum Drain-Source Voltage of 100 V and a continuous Drain Current of 5.5 A (Tc) and 4.2 A (Ta). It offers a maximum RDS(on) of 104 mΩ at VGS = 10 V and ID = 4.2 A, with a power dissipation capability of 29 W (Tc). This device is housed in a surface-mounted TO-252AA package, optimized for low on-state resistance and superior switching performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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