BSC123N08NS3G
Tillverkare
INFINEON
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
MOSFET:er N-Ch 80V 55A TDSON-8 OptiMOS 3
MOSFET:er N-Ch 80V 55A TDSON-8 OptiMOS 3
Beskrivning (eng)
Beskrivning (eng)
The BSC123N08NS3 G is an N-channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 80V and a continuous drain current (ID) of 55A. The device is housed in a TDSON-8 package, optimized for low on-state resistance (RDS(on)) and efficient thermal performance, making it suitable for various power management applications.
The BSC123N08NS3 G is an N-channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 80V and a continuous drain current (ID) of 55A. The device is housed in a TDSON-8 package, optimized for low on-state resistance (RDS(on)) and efficient thermal performance, making it suitable for various power management applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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