BS170-D26Z
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 500MA TO92-3
MOSFET N-CH 60V 500MA TO92-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 500mA (Ta) 830mW (Ta) Genomgående hål TO-92-3
N-Kanal 60 V 500mA (Ta) 830mW (Ta) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The BS170-D26Z is an N-Channel MOSFET designed for applications requiring a maximum drain-source voltage of 60V and a continuous drain current of 500mA. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 830mW at ambient temperature, it is ideal for low-power switching applications. The BS170-D26Z features low on-resistance, ensuring efficient operation in various electronic circuits, including signal amplification and switching applications.
The BS170-D26Z is an N-Channel MOSFET designed for applications requiring a maximum drain-source voltage of 60V and a continuous drain current of 500mA. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 830mW at ambient temperature, it is ideal for low-power switching applications. The BS170-D26Z features low on-resistance, ensuring efficient operation in various electronic circuits, including signal amplification and switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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