BS170-D26Z
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
SMALL SIGNAL FIELD-EFFECT TRANSI
SMALL SIGNAL FIELD-EFFECT TRANSI
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 500mA (Ta) 830mW (Ta) Genomgående hål TO-92-3
N-Kanal 60 V 500mA (Ta) 830mW (Ta) Genomgående hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The BS170-D26Z is a small signal N-Channel Field-Effect Transistor (FET) designed for low power applications. It features a maximum drain-source voltage (Vds) of 60 V and can handle a continuous drain current (Id) of 500 mA at a maximum power dissipation of 830 mW (Ta). Packaged in a TO-92-3 through-hole configuration, this transistor is ideal for switching and amplification tasks in various electronic circuits. Its compact size and efficient performance make it suitable for space-constrained designs.
The BS170-D26Z is a small signal N-Channel Field-Effect Transistor (FET) designed for low power applications. It features a maximum drain-source voltage (Vds) of 60 V and can handle a continuous drain current (Id) of 500 mA at a maximum power dissipation of 830 mW (Ta). Packaged in a TO-92-3 through-hole configuration, this transistor is ideal for switching and amplification tasks in various electronic circuits. Its compact size and efficient performance make it suitable for space-constrained designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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