BDX33C
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN DARL 100V 10A TO220AB
TRANS NPN DARL 100V 10A TO220AB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN - Darlington 100 V 10 A 70 W Genomgående hål TO-220AB
Bipolär (BJT) Transistor NPN - Darlington 100 V 10 A 70 W Genomgående hål TO-220AB
Beskrivning (eng)
Beskrivning (eng)
The BDX33C from onsemi is a high-performance NPN Darlington transistor designed for applications requiring high current and voltage handling. This bipolar junction transistor (BJT) features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 10 A, with a power dissipation capability of 70 W. Packaged in a TO-220AB form factor, it is suitable for through-hole mounting, making it ideal for power amplification and switching applications in various electronic circuits.
The BDX33C from onsemi is a high-performance NPN Darlington transistor designed for applications requiring high current and voltage handling. This bipolar junction transistor (BJT) features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 10 A, with a power dissipation capability of 70 W. Packaged in a TO-220AB form factor, it is suitable for through-hole mounting, making it ideal for power amplification and switching applications in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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